参与创新电子设备的研究人员面临的困难之一是可靠的材料比较。Rheinisch-WestfälischeTechnische Hochschule Aachen University（RWTH Aachen大学）教授Max Lemme教授Max Lemme和来自比利时，美国和中国的同时代人最近提出了一套明确的指南，以衡量即将到来的现场现场效果（Fets）的主要因素和绩效指标（。
Image Credit: Aayam 4D/Shutterstock.com
The guidelines can be found in a Perspective Article in the journalNature Electronics。
Research on FETs has long investigated the probability of substituting silicon as a channel material with upcoming nanomaterials such as graphene, carbon nanotubes, organic semiconductors, transition metal dichalcogenides, or ultrathin oxides.
The field is flourishing, and researchers continue to discover important facets of these materials. However, with regard to comparing the workings of various devices, there is frequently a lack of reliable reporting and assessment.
很难评估新材料对新晶体管的潜力，因为性能取决于设备结构的许多方面和细节，并且许多参数是相欧洲杯足球竞彩互依存的。
Rheinisch-WestfälischeTechnische Hochschule Aachen大学电子设备主席Max Lemme教授
A further difficulty is incorporated into the domain by the interdisciplinarity of the scientific community, which includes chemists, electrical engineers, physicists, and materials scientists. The host of methods increases the challenge of reporting and measuring results reliably.
为了解决此问题，Lemme和同时代人建立了待报告的设备因素的清单，并列出了建议的基准图以比较性能指标和设备参数。
Measurements on a graphene-based FET in a probe station at AMO. Image Credit: AMO
Furthermore, they demonstrated a clear example of how to use the suggested procedure by using it in the case of FETs based on monolayer molybdenum disulfide (MoS2）, which is one of the upcoming materials most researched in the last few years for transistor applications.
To identify the real advantages and opportunities offered by novel materials in the search for improved transistors, we need to be able to benchmark and report different devices in a consistent way. We also need to make sure that all relevant data are reported every time. We hope that our work will contribute to bring clarity in the community and guide the search for even better devices.
Rheinisch-WestfälischeTechnische Hochschule Aachen大学电子设备主席Max Lemme教授
期刊参考
Cheng，Z.，et al。（（2022) How to report and benchmark emerging field-effect transistors.Nature Electronics。doi.org/10.1038/s41928-022-00798-8。
Source:https://www.amo.de